Πρόσκληση σε Ομιλία του Prof. Dr. Hartmut Bracht

Εκ μέρους του Καθηγητή Χροναίου Αλέξανδρου σας στέλνουμε πρόσκληση για την ομιλία του Prof. Dr. Hartmut Bracht, University of Münster, Institute of Materials Physics, με θέμα « Diffusion and Defect Reactions in Semiconductors»

Η ομιλία θα πραγματοποιηθεί τη Τετάρτη 18 Φεβρουαρίου 2026 και ώρα 16:15 στο αμφιθέατρο 3 (ισόγειο) του Τμήματος Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών της Πολυτεχνικής Σχολής του Πανεπιστημίου Θεσσαλίας.

Παρατίθεται η περίληψη της παρουσίασης καθώς και το βιογραφικό του Prof. Dr. Hartmut Bracht

Περίληψη ομιλίας

Θέμα: Diffusion and Defect Reactions in Semiconductors

For more than half a century, our daily lives have been influenced by the ongoing development of semiconductor devices. The key factor for this development is the preparation of high-purity semiconductors as well as the ability to control the impurity level, that is, the incorporation of defects on the atomic scale. Currently, nanoelectronic devices increasingly consist of layered materials with defect densities that limit the integrity of their structure. Further miniaturization is intimately connected with an improved understanding of the properties and interaction of atomic defects to effectively control the technological processing steps to fabricate advanced functional devices. Defect control still remains a challenge for progress in semiconductor devices. Although atomistic calculations are increasingly used to predict defect types, defect interactions, their stability, mobility, and electronic properties, the experimental relevance of the theoretical results needs to be verified. In this respect, diffusion studies are of pivotal significance as they provide valuable information about the atomic mechanisms of mass transport, the type of point defects involved, and their thermodynamic properties. The diffusion behavior reflects defect interactions and defect properties at elevated temperatures that, in particular, are relevant for the fabrication of semiconductor devices. In this talk I share with you the mystery of diffusion in elemental and compound semiconductors and introduce the concept that explains the various facets of self- and dopant diffusion in semiconductors.

Βιογραφικό Σημείωμα

Hartmut Bracht earned his academic doctorate (Dr. rer. nat.) with highest honors (summa cum laude) from the University of Münster in 1993 and obtained his teaching license in physics (venia legendi) from the Department of Physics at the University of Münster in 2001. From 1997 to 1999, he was a Feodor Lynen Fellow of the Alexander von Humboldt Foundation at the University of California at Berkeley and at the Lawrence Berkeley National Laboratory (USA). This was followed by further research stays at the Institute of Physics and Astronomy at Aarhus University (Denmark), funded by the German Academic Exchange Service (DAAD). He is currently a professor and head of the “Electronic Materials” working group at the Institute of Materials Physics at the University of Münster. In addition to the Feodor Lynen Fellowship, he has been awarded a Heisenberg Fellowship by the German Research Foundation (DFG). He is the author/co-author of more than 195 publications in various international scientific journals. His scientific work focuses on mass and heat transport in elemental and compound semiconductors.